TMP160N10A v3.0 www.tsinghuaicwx.com wuxi unigroup microelectronics company device marking and package information device package marking tmp 160n 10a to -220 160 n 10a absolute maximum ratings t c = 25 oc, unless otherwise noted parameter symbol value unit drain -source voltage (v gs = 0 v) v dss 100 v cont inuous drain cu rrent (package limited) i d 150 a pulsed drain current (note1 ) i dm 600 a gate -source voltage v gss 20 v single pulse avalanche energy (note2) e as 540 mj avalanche current (note1) i as 60 a power dissipation (t c = 25oc ) p d 285 w operating junction and storage temperature range t j , t stg -55~+150 oc thermal resistance parameter symbol value unit thermal resistance, junction- to -case r thjc 0.53 oc/w thermal resistance, junction- to -ambient r thja 62.5 100v n-channel trench mosfet 1 features ? high density cell design for ultra low rdson ? fully characterized avalanche voltage and current ? good stability with high e as ? excellent package for good heat dissipation applications ? power switching application ? hard switched and high frequency circuits ? uninterruptible power supply a l l d a t a s h e e t . c o m
TMP160N10A v3.0 www.tsinghuaicwx.com wuxi unigroup microelectronics company specifications t j = 25oc , unless otherwise noted parameter symbol test conditions value unit min. typ. max. static drain -source breakdown voltage v (br)dss v gs = 0v, i d = 250a 100 -- -- v zero gate voltage drain current i dss v ds = 100v , v gs = 0v, t j = 25 oc -- -- 1 a v ds = 100v , v gs = 0v, t j = 150oc -- -- 100 gate -source leakage i gss v gs = 20v -- -- 100 na gate -source threshold voltage v gs(th) v ds = v gs , i d = 250a 2 -- 4 v drain -source on -resistance (note3 ) r ds(on) v gs = 10v, i d = 30a -- 5.5 6.5 m? forward transconductance (note3 ) g fs v ds = 5v , i d = 20a 60 -- -- s dynamic input capacitance c iss v gs = 0v, v ds = 25v , f = 1.0mhz -- 9000 -- pf output capacitance c oss -- 614 -- reverse transfer capacitance c rss -- 453 -- total gate charge q g v dd = 50v , i d = 20a , v gs = 10v -- 180 -- nc gate -source charge q gs -- 32 -- gate -drain charge q gd -- 66 -- turn -on delay time t d(on) v dd = 50v, i d = 20a, r g = 2.5 ? -- 38 -- ns turn -on rise time t r -- 40 -- turn -off delay time t d(off) -- 56 -- turn -off fall time t f -- 21 -- drain -source body diode characteristics continuous body diode current i s t c = 25 oc -- -- 160 a pulsed diode forward current i sm -- -- 640 body diode voltage v sd t j = 25 oc, i sd = 20a , v gs = 0v -- -- 1.2 v reverse recovery time t rr i f = 20a, di f / dt = 500a/ s -- 62 -- ns reverse recovery charge q rr -- 74 -- nc notes 1. repetitive rating: pulse width limited by maximum junction temperature 2. i as = 80a, v dd = 50v, r g = 25?, starting t j = 25 c 3. pulse test: pulse width 300s, duty cycle 1% 2 a l l d a t a s h e e t . c o m
TMP160N10A v3.0 www.tsinghuaicwx.com wuxi unigroup microelectronics company 0 20 40 60 80 100 0 1 2 3 4 5 0 40 80 120 160 200 0 1 2 3 4 5 3 typical characteristics t j = 25 o c, unless otherwise noted figure 1. output characteristics figure 2. transfer characteristics figure 3. on-resistance vs. drain current figure 4. capacitance figure 5. gate charge figure 6. body diode forward voltage v ds , drain- to -source voltage (v) v gs , gate- to -source voltage (v) i d , drain current (a) v ds , drain- to -source voltage (v) q g , total gate charge ( nc ) v sd , source- to -drain voltage (v) i s , source current (a) capacitance (pf) i d , drain current (a) t j = 25oc 0 2 4 6 8 10 0 20 40 60 80 100 120 140 160 180 v dd = 4 0v 10 4 10 3 10 2 0 10 20 30 40 50 60 c iss c oss c rss v gs = 0 f = 1mhz 10 5 10v 8v 6v v gs , gate- to -source voltage (v) r ds(on) , on-resistance ( m ) i d , drain current (a) t j = 150oc 0 0.2 0.4 0.6 0.8 1 10 1 10 0 10 -1 10 -4 10 2 t j = 25o c t j = 150 o c 10 -2 10 -3 4 4.5 5 5.5 6 6.5 7 0 50 100 150 200 v gs = 10v t j = 25 o c 4v 4.5v 5v v ds = 5v a l l d a t a s h e e t . c o m
TMP160N10A v3.0 www.tsinghuaicwx.com wuxi unigroup microelectronics company 4 typical characteristics t j = 25 o c, unless otherwise noted figure 7. on-resistance vs. junction temperature figure 9. transient thermal impedance figure 8. threshold voltage vs. junction temperature t j , junction temperature ( o c) t j , junction temperature ( o c) t p , pulse width (s) r ds(on) , (normalized) v gs( th ) , (variance) 10 1 10 0 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse z thjc , thermal impedance (normalized) 0 0.5 1 1.5 2 2.5 -50 0 50 100 150 v gs = 10v i d = 30a -1.5 -1 -0.5 0 0.5 1 -50 0 50 100 150 i d = 250a a l l d a t a s h e e t . c o m
TMP160N10A v3.0 www.tsinghuaicwx.com wuxi unigroup microelectronics company 5 figure a gate charge test circuit and waveform figure b resistive switching test circuit and waveform figure c unclamped inductive switching test circuit and waveform a l l d a t a s h e e t . c o m
TMP160N10A v3.0 www.tsinghuaicwx.com wuxi unigroup microelectronics company 6 to -220 a l l d a t a s h e e t . c o m
TMP160N10A v3.0 www.tsinghuaicwx.com wuxi unigroup microelectronics company 7 disclaimer all product specifications and data are subject to change without notice. for documents and material available from this datasheet, wuxi unigroup does not warrant or assume any legal liability or responsibility for the accuracy, completeness of any product or technology disclosed hereunder. no license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document or by any conduct of wuxi unigroup. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling wuxi unigroup products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify wuxi unigroup for any damages arising or resulting from such use or sale. wuxi unigroup disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. the product specifications do not expand or otherwise modify wuxi unigroups terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. wuxi unigroup microelectronics co ., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all wuxi unigroup products (including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. information (including circuit diagrams and circuit parameters) herein is for example only. it is not guaranteed for volume production. wuxi unigroup believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. a l l d a t a s h e e t . c o m
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